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Wet Polishing (CMP etc.)

Solutions

With the reduction in height and size of IC packages, there is increased demand for thinner built-in die in silicon devices. Therefore, the stress relief process is carried out to improve die strength after wafer backgrinding. Furthermore, a polishing process is also required after backgrinding to improve performance for devices such as high luminance sapphire (Al2O3) substrate for LEDs, lithium tantalate (LiTaO3) / lithium niobate (LiNbO3) substrate for high-speed communication device SAW filters, and silicon carbide (SiC) substrate for power devices.
Typical CMP equipment places the wafer above and the polishing pad below. In contrast, DISCO equipment possess a feed axis and places the polishing pad above and the wafer below. This structure is called “in-feed polishing” and is used for both dry polishing and wet polishing (polishing technique using chemicals, among which the most well-known process is CMP). DISCO’s wet polishing, introduced here, realizes scratch reduction, mirror surface finish, and improvements to cleanliness. Furthermore, depending on the material, an Epi Ready* finish can be achieved.

*Epi Ready: surfaces and materials that enable epitaxial growth.

Figure 1: Major stress relief processes
Figure 1: Major stress relief processes

Characteristics of Wet Polishing Process

  • Low-load, high-rotation polishing
Figure 2. Processing image of wet polishing
Figure 2. Processing image of wet polishing

Main Effects of Wet Polishing Process

  • Mirror surface finish processing
  • High cleanliness
  • Depending on the material, low number of scratches and Epi Ready finish can be achieved

Application Examples

  • Polishing for wafer production (substrate manufacturing process)
    • Silicon carbide (SiC)
    • Sapphire (Al2O3)
    • Lithium tantalite (LiTaO3) / Lithium niobate (LiNbO3)
  • Stress relief after backgrinding
    • Silicon (Si)
    • Sapphire (Al2O3)
    • Lithium tantalate (LiTaO3) / Lithium tantalate (LiTaO3) on on silicon (Si)
    • Gallium arsenide (GaAs)
    • Indium phosphide (InP)
  • Polishing before Cu-Cu bonding
  • Regeneration processing of silicon (Si) wafers
Figure 3. Polishing rate with wet polishing
Figure 3. Polishing rate with wet polishing

Compatible Equipment

Our product line-up provides highly extensible capabilities that can be used to match our customer’s operating environment and can also be used for a wide range of applications.


Contact

Please feel free to contact us with any questions or inquiries.

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